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SemiWell Semiconductor Bi-Directional Triode Thyristor
STW25A60
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 25 A ) High Commutation dv/dt
2.T2

3.Gate
1.T1
General Description
This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
TO-247
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 TC = 86 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 25 225/250 260 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 6.2
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V C C g
Oct, 2002. Rev. 1
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
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STW25A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -12.5 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Gate Trigger Current VD = 6 V, RL=10
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 35 A, Inst. Measurement
Ratings Min.
0.2 6
Typ.
35
Max.
5.0 1.4 30 30 30 1.5 1.5 1.5 1.3
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
mA
V
V
V/
mA C/W
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STW25A60
Fig 1. Gate Characteristics
10
3
Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
0
10
2
TJ = 125 C
o
IGM (2A)
10
1
TJ = 25 C
o
10
-1
VGD (0.2V)
1
10
10
2
10
3
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
o
Fig 4. On State Current vs. Allowable Case Temperature
Allowable Case Temperature [ oC]
130
35 30
Power Dissipation [W]

360
2
25 20 15 10 5 0 0
: Conduction Angle

= 180 o = 150 o = 120 o = 90 o = 60
o
120
110
= 30
100

2
= 30
o o
90
360
80
: Conduction Angle
= 60 o = 90 o = 120 o = 150o = 180
15 20 25 30
5
10
15
20
25
30
0
5
10
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
280
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
240
Surge On-State Current [A]
200
60Hz
o
o
160
VGT (25 C)
VGT (t C)
1
120
50Hz
80
V V V
+ GT1 _ GT1 _ GT3
40
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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STW25A60
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
I
GT3
IGT (25 C)
IGT (t C)
o
o
1
o
_
Transient Thermal Impedance [ C/W]
I I
+ GT1 _ GT1
1
0.1 -50
0
50
100
o
150
0.1 -2 10
10
-1
10
0
10
1
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10

6V

A

A
6V
6V
A
V
RG
V
RG
V
RG
Test Procedure
Test Procedure
Test Procedure
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STW25A60
TO-247 Package Dimension mm Min. 15.77 20.80 20.05 4.48 4.27 5.32 4.90 1.90 2.35 0.6 1.93 1.07 2.99 3.56 2.13 1.33 3.25 3.66 0.076 0.042 0.118 0.140 Typ. Max. 16.03 21.10 20.31 4.58 4.37 5.58 5.16 2.06 2.45 Min. 0.621 0.819 0.789 0.176 0.168 0.209 0.193 0.075 0.093 0.024 0.084 0.052 0.128 0.144 Inch Typ. Max. 0.631 0.831 0.800 0.180 0.172 0.220 0.203 0.081 0.096
Dim. A B C D E F G H I J K L M
G A H
B
D
I E 1 2 3 L
C
M
1. T1 2. T2 3. Gate
F
J
K
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